METHOD FOR FORMING EMITTER OF SOLAR CELL

WIPO Patent Application WO/2012/077896

A1

The present invention relates to a method for forming the emitter of a solar cell, which additionally diffuses doping atoms concentrated on the surface of a substrate by applying a subsequent heat treatment process after a diffusion process, thereby making a uniform doping concentration in the emitter to minimize the recombination rate of carriers. The method for forming the emitter of a solar cell according to the present invention comprises the steps of: preparing a crystalline silicon substrate of a first conductivity type; forming an emitter of a second conductivity type having a certain depth inside the surface of the substrate through a diffusion process; removing a diffusion by-product layer on the surface of the substrate, which is formed by the diffusion process; and additionally activating the emitter by heat-treating the substrate, wherein the doping concentration of the emitter formed by the diffusion process is 100-200Ω/□, and the surface resistance of the emitter, after the heat treatment has been performed, is 60-120Ω/□.

LEE JOON SUNG (KR)
YANG SU MI (KR)
SONG SEOK HYUN (KR)
JUNG SANG YOON (KR)
AHN SOO BEOM (KR)
LEE KYUNG WON (KR)
JU SANG MIN (KR)

PCT/KR2011/007234

June 14, 2012

September 30, 2011

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HYUN DAI HEAVY IND CO LTD (KR)
LEE JOON SUNG (KR)
YANG SU MI (KR)
SONG SEOK HYUN (KR)
JUNG SANG YOON (KR)
AHN SOO BEOM (KR)
LEE KYUNG WON (KR)
JU SANG MIN (KR)

H01L31/18; H01L31/042

KR20100049724A	2010-05-13
KR20080100057A	2008-11-14
JP2010239078A	2010-10-21
KR20100128132A	2010-12-07

KIM, SUN-YOUNG (KR)
김순영 (KR)

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