Title:
METHOD FOR FORMING GE-SB-TE FILM, AND STORAGE MEDIUM
Document Type and Number:
WIPO Patent Application WO/2010/143571
Kind Code:
A1
Abstract:
Disclosed is a method for forming a Ge-Sb-Te film, by which the Ge-Sb-Te film to be a Ge2Sb2Te5 film is formed on a substrate by CVD using a gaseous Ge raw material, a gaseous Sb raw material, and a gaseous Te raw material. The method has: a step (step (1)) wherein the substrate is disposed in a processing container; a step (step (2)) wherein the gaseous Ge raw material and the gaseous Sb raw material are introduced into the processing container, and a first stage film is formed on the substrate; a step (step (3)) wherein the gaseous Sb raw material and the gaseous Te raw material are introduced into the processing container, and a second stage film is formed on the film obtained by the first stage film formation. The Ge-Sb-Te film is obtained using the film obtained in the step (2) and the film obtained in the step (3).
Inventors:
KAWANO YUMIKO (JP)
ARIMA SUSUMU (JP)
ARIMA SUSUMU (JP)
Application Number:
PCT/JP2010/059338
Publication Date:
December 16, 2010
Filing Date:
June 02, 2010
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
KAWANO YUMIKO (JP)
ARIMA SUSUMU (JP)
KAWANO YUMIKO (JP)
ARIMA SUSUMU (JP)
International Classes:
H01L21/365; C23C16/18; C23C16/30; G11B7/24027; G11B7/243; G11B7/2433; G11B7/26; H01L45/00
Foreign References:
| JP2007056369A | 2007-03-08 | |||
| JP2006128370A | 2006-05-18 |
Attorney, Agent or Firm:
TAKAYAMA HIROSHI (JP)
Hiroshi Takayama (JP)
Hiroshi Takayama (JP)
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