METHOD FOR FORMING IMPURITY-INTRODUCED LAYER, METHOD FOR CLEANING OBJECT TO BE PROCESSED, APPARATUS FOR INTRODUCING IMPURITY AND METHOD FOR PRODUCING DEVICE

Title:

METHOD FOR FORMING IMPURITY-INTRODUCED LAYER, METHOD FOR CLEANING OBJECT TO BE PROCESSED, APPARATUS FOR INTRODUCING IMPURITY AND METHOD FOR PRODUCING DEVICE

Document Type and Number:

WIPO Patent Application WO/2005/020306

Kind Code:

A1

Abstract:

A method for forming an impurity-introduced layer is disclosed which at least comprises a step for forming a resist pattern on one major surface of a solid base such as a silicon substrate (S27), a step for introducing impurities into the solid base through plasma doping in the ion mode (S23), a step for removing the resist (S28), a step for cleaning the solid base surface by removing metal contamination and particles (S25a), and a step for performing a heat treatment (S26). The resist removing step (S28) is performed by irradiating the resist with an oxygen plasma (S28a) or by bringing the resist into contact with a mixed solution of sulfuric acid and hydrogen peroxide solution or a mixed solution of NH₄OH, H₂O₂ and H₂O. The cleaning step (S25a) is performed by bringing the major surface of the solid base into contact with a mixed solution of sulfuric acid and hydrogen peroxide solution or a mixed solution of NH₄OH, H₂O₂ and H₂O. The resist removing step (S28) and the cleaning step (S25a) are performed at the same time by bringing the resist and the major surface of the solid base into contact with a mixed solution of sulfuric acid and hydrogen peroxide solution or a mixed solution of NH₄OH, H₂O₂ and H₂O at onece.

Inventors:

SASAKI YUICHIRO
OKASHITA KATSUMI
MIZUNO BUNJI
ITO HIROYUKI
JIN CHENG-GUO
TAMURA HIDEKI
NAKAYAMA ICHIRO
OKUMURA TOMOHIRO
MAESHIMA SATOSHI

Application Number:

PCT/JP2004/012583

Publication Date:

March 03, 2005

Filing Date:

August 25, 2004

Export Citation:

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Assignee:

MATSUSHITA ELECTRIC IND CO LTD (JP)
SASAKI YUICHIRO
OKASHITA KATSUMI
MIZUNO BUNJI
ITO HIROYUKI
JIN CHENG-GUO
TAMURA HIDEKI
NAKAYAMA ICHIRO
OKUMURA TOMOHIRO
MAESHIMA SATOSHI

International Classes:

F01N11/00; F02B37/18; F02B39/16; F02D23/00; F02D41/00; H01L21/02; H01L21/223; H01L21/265; H01L21/304; (IPC1-7): H01L21/265; H01L21/304

Domestic Patent References:

WO2002067333A1

2002-08-29

Foreign References:

JPH1131665A	1999-02-02
JP2003077856A	2003-03-14
JP2001007220A	2001-01-12
JPH09199719A	1997-07-31
JP2000349039A	2000-12-15
JPH11340424A	1999-12-10
JP2000495814A
JPH11274492A	1999-10-08
JPH08213339A	1996-08-20
JPH02295114A	1990-12-06
JPH03255622A	1991-11-14
JPH05314944A	1993-11-26
JPH0992804A	1997-04-04

Attorney, Agent or Firm:

Iwahashi, Fumio c/o Matsushita Electric Industrial Co. Ltd. (1006, Oaza Kadom, Kadoma-shi Osaka 01, JP)

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