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Title:
METHOD FOR FORMING MAGNETORESISTANCE EFFECT FILM
Document Type and Number:
WIPO Patent Application WO/2000/065614
Kind Code:
A1
Abstract:
A method for forming a magnetoresistance effect film, enabling manufacture of a magnetoresistive device having a high MR ratio by improving the flatness of the interfaces between layers without deteriorating the crystallinity of a multilayer film. The method for forming a magnetoresistance effect film including a free magnetization layer, a nonmagnetic layer, a fixed magnetization layer, and an antiferromagnetic layer on a predetermined substrate in order of mention or in the reverse order is characterized by comprising at least the step of disposing the substrate in a film-forming chamber, lowering the ultimate degree of vacuum in the film-forming chamber below 10?-10¿ Torr, introducing at least an oxygen-containing gas (a) into the film-forming chamber, changing the degree of vacuum in the film-forming chamber to a constant pressure in a range from 3x10?-9¿ Torr to 1x10?-8¿ Torr, introducing a gas (b) consisting of Ar, and sputtering a predetermined target using a mixture of the gases (a, b), so as to form the free magnetization layer under the nonmagnetic layer or forming both the fixed magnetization layer and the nonmagnetic layer.

Inventors:
TAKAHASHI MIGAKU (JP)
UNEYAMA KAZUHIRO (JP)
YAGAMI KOUJIROU (JP)
TSUNODA MASAKIYO (JP)
Application Number:
PCT/JP1999/002148
Publication Date:
November 02, 2000
Filing Date:
April 22, 1999
Export Citation:
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Assignee:
TAKAHASHI MIGAKU (JP)
UNEYAMA KAZUHIRO (JP)
YAGAMI KOUJIROU (JP)
TSUNODA MASAKIYO (JP)
International Classes:
H01F10/32; H01F41/30; H01L43/12; (IPC1-7): H01F41/18
Foreign References:
JPH10270776A1998-10-09
Attorney, Agent or Firm:
Fukumori, Hisao (Kudanminami 4-chome Chiyoda-ku Tokyo, JP)
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