Title:
METHOD FOR FORMING A METAL CAP IN A SEMICONDUCTOR MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2015/177971
Kind Code:
A1
Abstract:
Exemplary embodiments of the present invention are directed towards a method for fabricating a semiconductor memory device comprising selectively depositing a material to form a cap (300) above a recessed cell structure (202) in order to prevent degradation of components inside the cell structure in oxidative or corrosive environments.
Inventors:
BALAKRISHNAN MURALIKRISHNAN (US)
BIAN ZAILONG (US)
DAMARLA GOWRISANKAR (US)
LI HONGQI (US)
LU JIN (US)
RAMALINGAM SHYAM (US)
ZHU XIAOYUN (US)
BIAN ZAILONG (US)
DAMARLA GOWRISANKAR (US)
LI HONGQI (US)
LU JIN (US)
RAMALINGAM SHYAM (US)
ZHU XIAOYUN (US)
Application Number:
PCT/JP2015/002281
Publication Date:
November 26, 2015
Filing Date:
April 28, 2015
Export Citation:
Assignee:
SONY CORP (JP)
International Classes:
H01L45/00
Foreign References:
| US20060094236A1 | 2006-05-04 | |||
| US20140124726A1 | 2014-05-08 | |||
| US20070108430A1 | 2007-05-17 | |||
| US20040224497A1 | 2004-11-11 | |||
| US20040232552A1 | 2004-11-25 |
Other References:
HYUNGJUN ET AL: "Applications of atomic layer deposition to nanofabrication and emerging nanodevices", THIN SOLID FILMS, 1 January 2009 (2009-01-01), pages 2563 - 2580, XP055124247, Retrieved from the Internet DOI: 10.1016/j.tsf.2008.09.007
Attorney, Agent or Firm:
TSUBASA PATENT PROFESSIONAL CORPORATION (Shinjuku 1-chome Shinjuku-k, Tokyo 22, JP)
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