Title:
METHOD FOR FORMING METAL MESH AND SEMICONDUCTOR DEVICE HAVING METAL MESH
Document Type and Number:
WIPO Patent Application WO/2016/175458
Kind Code:
A1
Abstract:
The present invention enables: a network to be formed from a nanosized material on a substrate including a light-emitting element or a light receiving element; a pattern layer to be formed such that a part of the network is embedded, and then, a nanomaterial for forming a network to be removed from the pattern layer, thereby forming a nanosized pattern to be formed at the pattern layer; and the pattern layer to be removed after metal is deposited on the pattern, thereby forming, on the substrate, a metal mesh having a nanosized line width. Therefore, compared with a method for forming a metal mesh by using a conventional photolithography process, the present invention can form, through a simple process, a metal mesh having a nanosized line width and can also easily adjust the line width of the metal mesh by using a nanomaterial having a width corresponding to a desired line width of the metal mesh, such that a visibility problem and a moire phenomenon can be simply resolved.
Inventors:
KIM TAE GEUN (KR)
LEE BYEONG RYONG (KR)
LEE BYEONG RYONG (KR)
Application Number:
PCT/KR2016/003093
Publication Date:
November 03, 2016
Filing Date:
March 25, 2016
Export Citation:
Assignee:
UNIV KOREA RES & BUS FOUND (KR)
International Classes:
H01L29/41; B82B1/00; H01L21/02
Foreign References:
JP2011192396A | 2011-09-29 | |||
KR20110079117A | 2011-07-07 | |||
KR101500192B1 | 2015-03-06 | |||
KR20130058664A | 2013-06-04 | |||
KR20120124346A | 2012-11-13 |
Attorney, Agent or Firm:
B&IP-JOOWON PATENT AND LAW FIRM (KR)
특허법인 주원 (KR)
특허법인 주원 (KR)
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