Title:
METHOD FOR FORMING A NANODIAMOND-IMPREGNATED DIELECTRIC LAYER FOR A HIGHLY HEAT DISSIPATING METAL SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2012/148020
Kind Code:
A1
Abstract:
The present invention relates to a method for forming a dielectric layer having an improved heat-dissipating performance and dielectric performance by impregnating nanodiamond into the dielectric layer of an existing metal heat-dissipating substrate in order to improve the heat-dissipating ability of the dielectric layer. More specifically, an anodisation method is introduced so as to form an anodic film as a dielectric layer on at least one surface of an aluminium or aluminium alloy or a magnesium or magnesium alloy plate material provided as a metal heat-dissipating plate, and then an acid or an alkali is used so as to expand voids in the anodic film, and conditioning is carried out in order to ensure that the insides of the expanded voids are hydrophilic. Also, a method is provided for forming a nanodiamond-impregnated dielectric layer for a highly heat dissipating metal substrate, the method comprising the step of impregnating the expanded voids with nanodiamond.
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Inventors:
KIM DONG-KYU (KR)
KIM HYUN-SU (KR)
HWANG YOUNG-CHAN (KR)
SON JAE-GU (KR)
KIM HYUN-SU (KR)
HWANG YOUNG-CHAN (KR)
SON JAE-GU (KR)
Application Number:
PCT/KR2011/003177
Publication Date:
November 01, 2012
Filing Date:
April 28, 2011
Export Citation:
Assignee:
INNECTRON CO LTD (KR)
KIM DONG-KYU (KR)
KIM HYUN-SU (KR)
HWANG YOUNG-CHAN (KR)
SON JAE-GU (KR)
KIM DONG-KYU (KR)
KIM HYUN-SU (KR)
HWANG YOUNG-CHAN (KR)
SON JAE-GU (KR)
International Classes:
H01L33/64; H01L23/34
Foreign References:
| KR20110003763A | 2011-01-13 | |||
| KR20100025502A | 2010-03-09 | |||
| KR20090070397A | 2009-07-01 | |||
| KR20080061697A | 2008-07-03 | |||
| KR100764432B1 | 2007-10-05 |
Attorney, Agent or Firm:
YOON, Eui-Sang (KR)
윤의상 (KR)
윤의상 (KR)
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Claims: