METHOD FOR FORMING OXIDE COATING FILM, OXIDE COATING FILM AND COATING FILM STRUCTURE

WIPO Patent Application WO/2004/081265

A1

A method for forming an oxide coating film with good surface morphology and crystal quality by organic metal chemical vapor deposition using two or more kinds of organic metal compound material gas and oxygen gas is disclosed. A film-forming apparatus comprising a first supply port (11A), a second supply port (11B), a third supply port (11C) and a film formation chamber (7) is used therefor. A first material gas (A) containing a first organic metal compound is supplied through the first supply port (11A) into the chamber (7). A second material gas (B) containing a second organic metal compound is supplied through the second supply port (11B) into the chamber (7). Oxygen gas (C) is supplied through the third supply port (11C) into the chamber (7). Within the chamber (7), the oxygen gas (D) comes into contact with the first material gas (E) before being mixed with the second material gas (F).

IWAI MAKOTO (JP)
OHMORI MAKOTO (JP)
YOSHINO TAKASHI (JP)
IMAEDA MINORU (JP)

PCT/JP2004/002964

September 23, 2004

March 08, 2004

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NGK INSULATORS LTD (JP)
IWAI MAKOTO (JP)
OHMORI MAKOTO (JP)
YOSHINO TAKASHI (JP)
IMAEDA MINORU (JP)

C23C16/40; C23C16/455; C30B25/02; C30B25/14; C30B29/30; B01F23/10; (IPC1-7): C30B25/14; C30B29/30; C23C16/455; C23C16/40

WO1997000336A1

1997-01-03

JPH0790587A	1995-04-04
JPH1045490A	1998-02-17
JPH0375207A	1991-03-29
JP2001343544A	2001-12-14
JPH04119906A	1992-04-21
JP3253295B2	2002-02-04
EP0252755A1	1988-01-13

J. CRYSTAL GROWTH, vol. 148, 1995, pages 324 - 326

Hosoda, Masutoshi (17-22 Akasaka 2-chom, Minato-ku Tokyo, JP)

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