Title:
METHOD FOR FORMING OXIDE THIN FILM
Document Type and Number:
WIPO Patent Application WO/2015/011855
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a method for forming an oxide thin film which has desired optical properties and can be formed at a high film formation speed while keeping the damage to the interface between a substrate and the oxide thin film at a low level. A method for forming an oxide thin film according to one embodiment of the present invention can form a film of an oxide on a substrate in a reaction chamber in which a target and the substrate are so arranged as to face each other. The method is characterized by comprising a step of supplying oxygen radical into the reaction chamber, a step of supplying an inert gas into the reaction chamber, and a step of supplying the oxygen radical and then sputtering the surface of the target with ions of the inert gas, whereby a film of an oxide composed of a material of the target which soars from the surface of the target and the oxygen radical is formed on the substrate.
Inventors:
MATSUO KAZUAKI (JP)
YAMAGUCHI NOBUO (JP)
YAMAGUCHI NOBUO (JP)
Application Number:
PCT/JP2014/001846
Publication Date:
January 29, 2015
Filing Date:
March 28, 2014
Export Citation:
Assignee:
CANON ANELVA CORP (JP)
International Classes:
C23C14/34; C23C14/54; H01L21/316
Foreign References:
| JP2007204819A | 2007-08-16 | |||
| JP2007321175A | 2007-12-13 |
Attorney, Agent or Firm:
OKABE, Yuzuru et al. (JP)
Okabe 讓 (JP)
Okabe 讓 (JP)
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