Title:
METHOD OF FORMING PATTERN
Document Type and Number:
WIPO Patent Application WO/2008/038602
Kind Code:
A1
Abstract:
A method of forming a pattern, including the operations of forming an underlayer
film of underlayer film forming material on a support; forming a hard mask of silicon
hard mask forming material on the underlayer film; coating the hard mask with
a chemical amplification type positive resist composition to thereby form a
first resist film; subjecting the first resist film to selective exposure via
a first mask pattern and development to thereby form a first resist pattern; using
the first resist pattern as a mask, etching the hard mask to thereby form a first
pattern; and coating the first pattern and underlayer film with a chemical amplification
type positive silicon resist composition to thereby form a second resist film,
and including the operations of subjecting the second resist film to selective
exposure via a second mask pattern and development to thereby form a second resist
pattern; using the first pattern and second resist pattern as a mask, etching
the underlayer film to thereby form a second pattern.
Inventors:
KOHNO SHINICHI (JP)
HARADA HISANOBU (JP)
HARADA HISANOBU (JP)
Application Number:
PCT/JP2007/068459
Publication Date:
April 03, 2008
Filing Date:
September 21, 2007
Export Citation:
Assignee:
TOKYO OHKA KOGYO CO LTD (JP)
KOHNO SHINICHI (JP)
HARADA HISANOBU (JP)
KOHNO SHINICHI (JP)
HARADA HISANOBU (JP)
International Classes:
G03F7/40; G03F7/039; G03F7/075; G03F7/26; H01L21/027
Foreign References:
| JP2004296930A | 2004-10-21 | |||
| JP2002175981A | 2002-06-21 | |||
| JPS63170917A | 1988-07-14 | |||
| JP2006084799A | 2006-03-30 | |||
| JP2005018054A | 2005-01-20 | |||
| JP2005029742A | 2005-02-03 |
Other References:
EBIHARA T. ET AL: "Beyond k1=0.25 lithography: 70 nm L/S patterning using KrF scanners", PROCEEDINGS OF SPIE, vol. 5256, 25 March 2004 (2004-03-25), pages 985 - 994, XP002418693
LEE S. ET AL.: "Double exposure technology using silicon containing materials", PROCEEDINGS OF SPIE, vol. 6153, 24 July 2006 (2006-07-24), pages 61531K1 - 61531K7, XP003021759
LEE S. ET AL.: "Double exposure technology using silicon containing materials", PROCEEDINGS OF SPIE, vol. 6153, 24 July 2006 (2006-07-24), pages 61531K1 - 61531K7, XP003021759
Attorney, Agent or Firm:
TANAI, Sumio et al. (Yaesu Chuo-k, Tokyo 53, JP)
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