METHOD FOR FORMING PROJECTED PATTERN, EXPOSURE APPARATUS AND PHOTOMASK

WIPO Patent Application WO/2010/070988

A1

Disclosed is a photomask (3) used for exposure of a substrate that is coated with a positive photosensitive material, wherein at least a first mask pattern group (16) and a second mask pattern group (17) are formed on a transparent substrate at a predetermined arrangement pitch.  The first mask pattern group (16) has first light-shielding patterns (20), which are arranged at intervals corresponding to two kinds of projected pattern formation parts having different heights on the substrate, and have an area approximately equal to the cross-sectional area of the projected patterns.  The second mask pattern group (17) has second light-shielding patterns (22) having a predetermined area corresponding to one kind of projected pattern formation part which is higher in height among the two kinds of projected pattern formation parts, and opening patterns (23) corresponding to the other kind of projected pattern formation part which is lower in height.  Consequently, the top portions of a plurality of kinds of projected patterns having different heights can be formed into a roughly hemispherical shape.

KAJIYAMA KOICHI (JP)
MIZUMURA MICHINOBU (JP)
HASHIMOTO KAZUSHIGE (JP)

PCT/JP2009/068906

June 24, 2010

November 05, 2009

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V TECHNOLOGY CO LTD (JP)
KAJIYAMA KOICHI (JP)
MIZUMURA MICHINOBU (JP)
HASHIMOTO KAZUSHIGE (JP)

G03F7/20; G02F1/1335; G02F1/1339; G03F1/00

JP2008180896A	2008-08-07
JPH088164A	1996-01-12
JPH06148861A	1994-05-27
JP2003075808A	2003-03-12
JP2001201750A	2001-07-27
JP2004240136A	2004-08-26
JPS56168654A	1981-12-24
JP2004110019A	2004-04-08

SASAJIMA, Fujio et al. (JP)
Sasajima Wealth 2 male (JP)

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