Title:
METHOD FOR FORMING SELF-ALIGNED PHASE-CHANGE SEMICONDUCTOR DIODE MEMORY
Document Type and Number:
WIPO Patent Application WO/2010/022036
Kind Code:
A3
Abstract:
A method for fabricating a memory device includes depositing a phase-change and/or a resistive change material. The memory device is formed photolithographically using sixteen or fewer masks.
Inventors:
APODACA MAC D (US)
ZHAO AILIAN (US)
CHOW JENN C (US)
BROWN THOMAS (US)
CEDER LISA (US)
ZHAO AILIAN (US)
CHOW JENN C (US)
BROWN THOMAS (US)
CEDER LISA (US)
Application Number:
PCT/US2009/054137
Publication Date:
May 30, 2013
Filing Date:
August 18, 2009
Export Citation:
Assignee:
CONTOUR SEMICONDUCTOR INC (US)
APODACA MAC D (US)
ZHAO AILIAN (US)
CHOW JENN C (US)
BROWN THOMAS (US)
CEDER LISA (US)
APODACA MAC D (US)
ZHAO AILIAN (US)
CHOW JENN C (US)
BROWN THOMAS (US)
CEDER LISA (US)
International Classes:
H01L45/00
Domestic Patent References:
| WO2008061194A1 | 2008-05-22 | |||
| WO2007116749A1 | 2007-10-18 |
Foreign References:
| US20060094236A1 | 2006-05-04 |
Attorney, Agent or Firm:
FRANK, Steven, J. et al. (2020 K Street N.W, Washington DC, US)
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