METHOD FOR FORMING SEMICONDUCTOR FILM AND USE OF SEMICONDUCTOR FILM

Title:

METHOD FOR FORMING SEMICONDUCTOR FILM AND USE OF SEMICONDUCTOR FILM

Document Type and Number:

WIPO Patent Application WO/2004/033756

Kind Code:

A1

Abstract:

A method for forming a semiconductor film, characterized in that it comprises spraying a dispersion containing fine semiconductor particles onto a surface of a substrate in such a manner that sprayed particles from the dispersion discharged from a spray coater have an average particle diameter of ca. 30 μm or less, followed by drying, thereby forming a porous semiconductor film; and a use of a semiconductor film formed by said method for forming a semiconductor film.

Inventors:

Kawaraya, Masahide c/o KANSAI PAINT CO. LTD. (17-1, Higashiyawata 4-chom, Hiratsuka-shi Kanagawa, 254-0016, JP)
Hayashi, Iwao c/o KANSAI PAINT CO. LTD. (17-1, Higashiyawata 4-chom, Hiratsuka-shi Kanagawa, 254-0016, JP)

Application Number:

PCT/JP2003/013019

Publication Date:

April 22, 2004

Filing Date:

October 10, 2003

Export Citation:

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Assignee:

KANSAI PAINT CO., LTD. (33-1, Kanzaki-cho Amagasaki-shi, Hyogo, 661-0964, JP)
Kawaraya, Masahide c/o KANSAI PAINT CO. LTD. (17-1, Higashiyawata 4-chom, Hiratsuka-shi Kanagawa, 254-0016, JP)
Hayashi, Iwao c/o KANSAI PAINT CO. LTD. (17-1, Higashiyawata 4-chom, Hiratsuka-shi Kanagawa, 254-0016, JP)

International Classes:

C23C24/00; C23C24/02; C23C24/08; C23C26/00; H01G9/20; (IPC1-7): C23C26/00

Attorney, Agent or Firm:

Saegusa, Eiji (Kitahama TNK Building, 1-7-1 Doshomachi, Chuo-k, Osaka-shi Osaka, 541-0045, JP)

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