Title:
METHOD FOR FORMING SEMICONDUCTOR FILM AND USE OF SEMICONDUCTOR FILM
Document Type and Number:
WIPO Patent Application WO/2004/033756
Kind Code:
A1
Abstract:
A method for forming a semiconductor film, characterized in that it comprises spraying a dispersion containing fine semiconductor particles onto a surface of a substrate in such a manner that sprayed particles from the dispersion discharged from a spray coater have an average particle diameter of ca. 30 μm or less, followed by drying, thereby forming a porous semiconductor film; and a use of a semiconductor film formed by said method for forming a semiconductor film.
Inventors:
KAWARAYA MASAHIDE (JP)
HAYASHI IWAO (JP)
HAYASHI IWAO (JP)
Application Number:
PCT/JP2003/013019
Publication Date:
April 22, 2004
Filing Date:
October 10, 2003
Export Citation:
Assignee:
KANSAI PAINT CO LTD (JP)
KAWARAYA MASAHIDE (JP)
HAYASHI IWAO (JP)
KAWARAYA MASAHIDE (JP)
HAYASHI IWAO (JP)
International Classes:
C23C24/00; C23C24/02; C23C24/08; C23C26/00; H01G9/20; (IPC1-7): C23C26/00
Foreign References:
| JP2002324591A | 2002-11-08 |
Other References:
See also references of EP 1550742A4
Attorney, Agent or Firm:
Saegusa, Eiji (1-7-1 Doshomachi, Chuo-k, Osaka-shi Osaka, JP)
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