Title:
METHOD FOR FORMING SILICON-CONTAINING FILM, AND TREATMENT DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/158331
Kind Code:
A1
Abstract:
A method for forming a silicon-containing film according to one aspect of the present disclosure is a method for forming a silicon-containing film in a recess formed in a surface of a substrate, said method having: (a) a step for forming a liquid film in the recess by exposing the substrate, which has been adjusted to a first temperature, to a plasma produced from a treatment gas containing halogen-containing silane; and (b) a step for curing the liquid film by heat treating the substrate at a second temperature which is higher than the first temperature.
Inventors:
MATSUKI NOBUO (JP)
MORISADA YOSHINORI (JP)
OBA DAISUKE (JP)
MORISADA YOSHINORI (JP)
OBA DAISUKE (JP)
Application Number:
PCT/JP2022/000542
Publication Date:
July 28, 2022
Filing Date:
January 11, 2022
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/205; C23C16/42; C23C16/56
Foreign References:
| JP2015534265A | 2015-11-26 | |||
| JP2011504651A | 2011-02-10 | |||
| JPH0529229A | 1993-02-05 | |||
| US20150118864A1 | 2015-04-30 | |||
| US9382268B1 | 2016-07-05 | |||
| JP2020520120A | 2020-07-02 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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