Title:
METHOD FOR FORMING SILICON FILM ON SUBSTRATE HAVING FINE PATTERN
Document Type and Number:
WIPO Patent Application WO/2020/080281
Kind Code:
A1
Abstract:
A method for forming a silicon film on a substrate having a fine pattern, which comprises: a step for subjecting a substrate having a fine pattern to a surface treatment with use of an adhesion promoter; a step for forming a coating film by applying a silane polymer solution to the substrate that has been subjected to the surface treatment; and a step for heating the coating film.
Inventors:
TANAKA YUKI (JP)
HASHIMOTO HIROYUKI (JP)
NAKAMURA MAYUKO (JP)
MASUDA TAKASHI (JP)
TAKAGISHI HIDEYUKI (JP)
HASHIMOTO HIROYUKI (JP)
NAKAMURA MAYUKO (JP)
MASUDA TAKASHI (JP)
TAKAGISHI HIDEYUKI (JP)
Application Number:
PCT/JP2019/040194
Publication Date:
April 23, 2020
Filing Date:
October 11, 2019
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECH (JP)
JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECH (JP)
International Classes:
B05D7/24; B05D3/02; B05D7/00; B32B27/00; H01L21/208
Domestic Patent References:
| WO2015011980A1 | 2015-01-29 | |||
| WO2013154075A1 | 2013-10-17 |
Foreign References:
| JP2017001000A | 2017-01-05 | |||
| JP2000106364A | 2000-04-11 | |||
| JPH09312334A | 1997-12-02 | |||
| JPH0954440A | 1997-02-25 | |||
| JP2009290016A | 2009-12-10 | |||
| JP2009102224A | 2009-05-14 |
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (JP)
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