Title:
METHOD FOR FORMING SILICON NITRIDE FILM, METHOD FOR MANUFACTURING ORGANIC ELECTRONIC DEVICE, AND APPARATUS FOR FORMING SILICON NITRIDE FILM
Document Type and Number:
WIPO Patent Application WO/2014/030558
Kind Code:
A1
Abstract:
A method for forming a silicon nitride film according to one embodiment of the present invention is a method for forming a silicon nitride film on a substrate that is contained in a process chamber. In this method for forming a silicon nitride film, a process gas that contains a silane gas as well as a nitrogen gas and a hydrogen gas, or an ammonia gas is supplied into the process chamber. In this method for forming a silicon nitride film, a plasma is produced by exciting the process gas and a silicon nitride film is formed on the substrate by plasma processing with use of the plasma. In this method for forming a silicon nitride film, a bias electric field is applied to a part of a silicon nitride film by intermittently controlling ON/OFF of a high frequency power supply during or after the formation of the silicon nitride film.
Inventors:
ISHIKAWA HIRAKU (JP)
Application Number:
PCT/JP2013/071734
Publication Date:
February 27, 2014
Filing Date:
August 09, 2013
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
C23C16/42; C23C16/455; C23C16/511; H01L51/50; H05B33/04; H05B33/10
Domestic Patent References:
| WO2009028485A1 | 2009-03-05 | |||
| WO2007013605A1 | 2007-02-01 | |||
| WO2011104803A1 | 2011-09-01 |
Foreign References:
| JP2005039262A | 2005-02-10 | |||
| JP2002026007A | 2002-01-25 | |||
| JP2002520849A | 2002-07-09 | |||
| JP2011249626A | 2011-12-08 | |||
| JP2007005705A | 2007-01-11 | |||
| JP2009021272A | 2009-01-29 | |||
| JP2012188735A | 2012-10-04 |
Attorney, Agent or Firm:
SAKAI, HIROAKI (JP)
Hiroaki Sakai (JP)
Hiroaki Sakai (JP)
Download PDF: