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Title:
METHOD FOR FORMING SILICON OXIDE FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2010/095330
Kind Code:
A1
Abstract:
A method for forming a silicon oxide film includes: a step wherein a silicon compound gas, an oxidized gas and a rare gas are supplied into a processing container (32) in a state where the surface temperature of a holding table (34), which holds a substrate to be processed (W), is kept at 300 °C or below, microwave plasma is generated in the processing container (32), and a silicon oxide film is formed on the substrate to be processed (W); and a step wherein the oxidized gas and the rare gas are supplied into the processing container (32), microwave plasma is generated in the processing container (32), and the silicon oxide film formed on the substrate to be processed (W) is processed with plasma.

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Inventors:
UEDA HIROKAZU (JP)
OHSAWA YUSUKE (JP)
TANAKA YOSHINOBU (JP)
Application Number:
PCT/JP2009/070691
Publication Date:
August 26, 2010
Filing Date:
December 10, 2009
Export Citation:
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Assignee:
TOKYO ELECTRON LTD (JP)
UEDA HIROKAZU (JP)
OHSAWA YUSUKE (JP)
TANAKA YOSHINOBU (JP)
International Classes:
H01L21/316; H01L29/78
Foreign References:
JP2003037105A2003-02-07
JP2003158127A2003-05-30
Attorney, Agent or Firm:
ITOH, Hidehiko et al. (JP)
Hidehiko Ito (JP)
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