Title:
METHOD OF FORMING SILICON THIN FILM AND SILICON THIN FILM SOLAR CELL
Document Type and Number:
WIPO Patent Application WO/2002/064854
Kind Code:
A1
Abstract:
When a silicon thin film is formed at a power density of at least 100 mW/cm?2¿ by using a vertical plasma CVD device with a substrate (21), having a conductive film (22) formed on the surface thereof and an area of at least 1200 cm?2¿, held on a substrate holder (1) and allowed to face an electrode, a separation groove (24) is provided in the conductive film (22) to thereby electrically insulate the substrate holder (1) from the conductive film (22) on the surface of the substrate (21).
More Like This:
| JP4389240 | How to make an antireflection film |
| JP2002080830 | HYDROPHILIC MEMBER AND ITS PRODUCTION METHOD |
Inventors:
SUEZAKI TAKASHI (JP)
KURIBE EIJI (JP)
KURIBE EIJI (JP)
Application Number:
PCT/JP2002/001280
Publication Date:
August 22, 2002
Filing Date:
February 15, 2002
Export Citation:
Assignee:
KANEKA CORP (JP)
SUEZAKI TAKASHI (JP)
KURIBE EIJI (JP)
SUEZAKI TAKASHI (JP)
KURIBE EIJI (JP)
International Classes:
C03C17/00; C03C17/22; C23C16/24; C23C16/458; H01L31/18; (IPC1-7): C23C16/24; H01L21/205; H01L31/04
Foreign References:
| JPH05265033A | 1993-10-15 | |||
| JPH10120491A | 1998-05-12 | |||
| JP2635950B2 | 1997-07-30 | |||
| JPH05166733A | 1993-07-02 | |||
| JPH077840B2 | 1995-01-30 | |||
| JPH11186573A | 1999-07-09 | |||
| EP1089346A2 | 2001-04-04 |
Other References:
See also references of EP 1361293A4
Attorney, Agent or Firm:
Suzuye, Takehiko c/o SUZUYE & SUZUYE 7-2 (Kasumigaseki 3-chome Chiyoda-ku, Tokyo, JP)
Download PDF: