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Patent Searching and Data


Title:
METHOD FOR FORMING STAIRCASE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/200565
Kind Code:
A1
Abstract:
Embodiments of a method for forming a staircase structure of 3D memory devices are disclosed. The method comprises (i) forming an alternating layer stack including multiple layers disposed on a substrate in a vertical direction; (ii) removing a portion of the alternating layer stack to form multiple step-platforms in a staircase region of the alternating layer stack; (iii) forming a hard mask layer to cover top surfaces of the step-platforms; (iv) forming multiple openings in the hard mask layer to expose a portion of each of the step-platforms; (v) forming a photoresist layer to cover the top surfaces of the step-platforms and the hard mask layer; (vi) using a same set of trim-etch processes to pattern the photoresist layer to form a set of staircases on each of the step-platforms; (vii) removing the photoresist layer and the hard mask layer; and repeating (iii), (iv), (v), (vi) and (vii) sequentially.

Inventors:
ZHOU YUTING (CN)
XIAO LIHONG (CN)
XU JIAN (CN)
LI SIZHE (CN)
TANG ZHAOHUI (CN)
LI ZHAOSONG (CN)
Application Number:
PCT/CN2018/083562
Publication Date:
October 24, 2019
Filing Date:
April 18, 2018
Export Citation:
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Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
H01L27/11578
Foreign References:
US20180082940A12018-03-22
KR20110001691A2011-01-06
US20140363980A12014-12-11
CN105514018A2016-04-20
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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