METHOD FOR FORMING THIN FILM ON BASIC MATERIAL THROUGH INTERMEDIATE LAYER

WIPO Patent Application WO/2004/040046

A1

A technology for forming a thin film of good quality on a basic material through an intermediate layer. The technology is applied preferably to the formation of a high-temperature superconducting oxide thin film being employed in a superconducting wire material or a superconducting device. The method for forming a thin film on a basic material through an intermediate layer is characterized by comprising a process for calculating the energy Ea on the interface A between the basic material and the intermediate layer, the energy Eb on the interface B between the intermediate layer and the thin film, and the energy Ec on the interface C between the basic material and the thin film under a state where the intermediate layer does not exist, and a process for selecting an intermediate layer material satisfying the conditions Ea