Title:
METHOD OF FORMING THIN FILM BY MICROPLASMA PROCESSING AND APPARATUS FOR THE SAME
Document Type and Number:
WIPO Patent Application WO/2008/023523
Kind Code:
A1
Abstract:
A method of forming, with satisfactory adhesion, a thin film of a metal or a metal
compound, such as a metal oxide or nitride, on a substrate made of a high-melting
material such as silicon or a ceramic by using metallic and metal-compound targets
as the main raw material to thereby eliminate the necessity of using a harmful
gas such as an organometal gas and by using an atmospheric-pressure plasma generated
at ordinary pressure as a reaction field and also as a heat source. Also provided
is an apparatus for forming the thin film. The method of thin-film formation by
plasma processing comprises disposing a raw material for thin-film formation
in each of one or more thin tubes (A) having an even inner diameter throughout,
introducing an inert gas into the thin tube (A) and applying a high-frequency
voltage to the thin tube (A) to generate a high-frequency plasma in the thin tube
(A), heating/evaporating the raw material while maintaining a flow rate of the
plasma gas in the thin tube (A) and keeping the temperature of the high-temperature
plasma gas high, ejecting the evaporated material from the thin tube (A), and
striking it on the substrate to heat the substrate with the plasma gas and cause
the material which is being struck to deposit on the substrate at atmospheric
pressure.
Inventors:
SHIMIZU YOSHIKI (JP)
SASAKI TAKESHI (JP)
MARIOTTI DAVIDE (JP)
KIRIHARA KAZUHIRO (JP)
TERASHIMA KAZUO (JP)
KOSHIZAKI NAOTO (JP)
SASAKI TAKESHI (JP)
MARIOTTI DAVIDE (JP)
KIRIHARA KAZUHIRO (JP)
TERASHIMA KAZUO (JP)
KOSHIZAKI NAOTO (JP)
Application Number:
PCT/JP2007/064411
Publication Date:
February 28, 2008
Filing Date:
July 23, 2007
Export Citation:
Assignee:
NAT INST OF ADVANCED IND SCIEN (JP)
SHIMIZU YOSHIKI (JP)
SASAKI TAKESHI (JP)
MARIOTTI DAVIDE (JP)
KIRIHARA KAZUHIRO (JP)
TERASHIMA KAZUO (JP)
KOSHIZAKI NAOTO (JP)
SHIMIZU YOSHIKI (JP)
SASAKI TAKESHI (JP)
MARIOTTI DAVIDE (JP)
KIRIHARA KAZUHIRO (JP)
TERASHIMA KAZUO (JP)
KOSHIZAKI NAOTO (JP)
International Classes:
C23C14/24; C23C14/22; H01L21/285; H05H1/24; H05H1/42
Foreign References:
JP2003328138A | 2003-11-19 | |||
JP2006104545A | 2006-04-20 | |||
JP2005262111A | 2005-09-29 | |||
JP2004220935A | 2004-08-05 | |||
JP2006060130A | 2006-03-02 |
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