Title:
METHOD FOR FORMING THIN FILM
Document Type and Number:
WIPO Patent Application WO/2014/196352
Kind Code:
A1
Abstract:
Reactive sputtering, wherein a compound thin film having a stable film quality is obtained at a high film-forming speed. The thin film is formed by voltage monitoring control (VC) and gas flow rate monitoring control (QC1). The voltage monitoring control (VC) is control in which, in a first cycle time (tv), a subject voltage (V) is monitored, whereby the gas flow rate (Q) is adjusted so that the subject voltage (V) value approaches a target voltage (Vt) value. The gas flow rate monitoring control (QC1) is control in which, in a second cycle time (tq1 (> tv)), the gas flow rate (Q) is monitored, whereby the target voltage (Vt) for the subject voltage (V) is changed so that the gas flow rate (Q) value approaches a target gas flow rate (Qt) value.
Inventors:
CHATANI MUNEHITO (JP)
SEKI HITOSHI (JP)
MORI ATSUSHI (JP)
SEKI HITOSHI (JP)
MORI ATSUSHI (JP)
Application Number:
PCT/JP2014/063317
Publication Date:
December 11, 2014
Filing Date:
May 20, 2014
Export Citation:
Assignee:
MURATA MANUFACTURING CO (JP)
International Classes:
C23C14/34
Foreign References:
| JP2000026967A | 2000-01-25 | |||
| JP2003342725A | 2003-12-03 | |||
| JP2006124811A | 2006-05-18 | |||
| JPH0578836A | 1993-03-30 |
Attorney, Agent or Firm:
Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)
Patent business corporation Fukami patent firm (JP)
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