Title:
METHOD FOR FORMING ZINC-DOPED TIN OXIDE THIN FILM
Document Type and Number:
WIPO Patent Application WO/2016/137233
Kind Code:
A1
Abstract:
Provided is a method for forming a zinc-doped tin oxide thin film. The method for forming the thin film comprises the steps of: preparing a source solution containing tin and zinc; and providing the source solution onto a substrate to form a base layer containing a zinc-doped tin oxide, wherein the zinc content in the base layer is lower than that in the source solution.
Inventors:
PARK JINSEONG (KR)
BAE JAEYOON (KR)
BAE JAEYOON (KR)
Application Number:
PCT/KR2016/001819
Publication Date:
September 01, 2016
Filing Date:
February 24, 2016
Export Citation:
Assignee:
IUCF-HYU(INDUSTRY-UNIVERSITY COOP FOUND HANYANG UNIVERSITY) (KR)
International Classes:
H01L21/208
Foreign References:
| KR20140023277A | 2014-02-26 | |||
| KR0176291B1 | 1999-04-15 | |||
| KR20130014183A | 2013-02-07 | |||
| JP2012094841A | 2012-05-17 |
Other References:
JEON, HYE - JI ET AL.: "Zinc-Tin Oxide Thin Film Transistors based on Atmospheric Processes", IN : THE 31 ST INTERNATIONAL KOREA - JAPAN SEMINAR ON CERAMICS, 28 November 2014 (2014-11-28), pages I-5
Attorney, Agent or Firm:
CHOI, Naeyoon (KR)
최내윤 (KR)
최내윤 (KR)
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