Title:
METHOD FOR FRAGMENTING OR METHOD FOR PRODUCING CRACKS IN SEMICONDUCTOR RAW MATERIAL, AND METHOD FOR PRODUCING MASS OF SEMICONDUCTOR RAW MATERIAL
Document Type and Number:
WIPO Patent Application WO/2020/009133
Kind Code:
A1
Abstract:
Provided are a method for fragmenting or a method for producing cracks in a semiconductor raw material, and a method for producing a mass of a semiconductor raw material, the methods making it possible to suppress contamination from an electrode material that accompanies application of a high-voltage pulse. A method for fragmenting a semiconductor raw material or a method for producing cracks in a semiconductor raw material, the method involving applying a high-voltage pulse to a semiconductor raw material disposed within a liquid, wherein a novel fluid is supplied to the portion to which the high-voltage pulse is applied and/or to a peripheral edge part of an electrode part, and the novel fluid and part of the liquid are drawn out from the liquid and ejected.
Inventors:
KANAI MASAHIRO (JP)
SATO RIKITO (JP)
TAKASUGI MUNEHIRO (JP)
UMEHARA KOKI (JP)
SATO RIKITO (JP)
TAKASUGI MUNEHIRO (JP)
UMEHARA KOKI (JP)
Application Number:
PCT/JP2019/026397
Publication Date:
January 09, 2020
Filing Date:
July 03, 2019
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP (JP)
International Classes:
B02C19/18; B02C19/00; B02C23/36; C30B15/00; C30B29/06; H01L21/304
Foreign References:
| JP2017104790A | 2017-06-15 | |||
| JP2017515774A | 2017-06-15 | |||
| JP2000079350A | 2000-03-21 | |||
| JP2018127750A | 2018-08-16 | |||
| JPH11188281A | 1999-07-13 | |||
| JP2000079350A | 2000-03-21 | |||
| JP2017515774A | 2017-06-15 | |||
| JP2014528355A | 2014-10-27 |
Other References:
See also references of EP 3819031A4
Attorney, Agent or Firm:
AOYAMA, Masakazu (JP)
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