Title:
METHOD OF GENERATING BALLISTIC ELECTRONS AND BALLISTIC ELECTRON SOLID SEMICONDUCTOR ELEMENT AND LIGHT EMITTING ELEMENT AND DISPLAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2001/071759
Kind Code:
A1
Abstract:
A method of generating ballistic electrons with a high controllability by applying an electric field to the nano-structure micro-crystal layer or a semi-insulating layer of a semiconductor to generate ballistic electrons or forward ballistic electrons by a multiple-tunnel effect; and a semiconductor element used in this method and provided with a practical material constitution.
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Inventors:
Koshida, Nobuyoshi (12-8, Midori-cho 3-chome Koganei-shi, Tokyo, 184-0003, JP)
Application Number:
PCT/JP2001/002415
Publication Date:
September 27, 2001
Filing Date:
March 26, 2001
Export Citation:
Assignee:
JAPAN SCIENCE AND TECHNOLOGY CORPORATION (1-8 Hon-cho 4-chome Kawaguchi-shi Saitama, 332-0012, JP)
Koshida, Nobuyoshi (12-8, Midori-cho 3-chome Koganei-shi, Tokyo, 184-0003, JP)
Koshida, Nobuyoshi (12-8, Midori-cho 3-chome Koganei-shi, Tokyo, 184-0003, JP)
International Classes:
H01J1/308; H01J1/312; H01J31/12; H01J63/06; (IPC1-7): H01J1/312; H01J9/02; H01J1/62; H01L29/66
Attorney, Agent or Firm:
Nishizawa, Toshio (6F Mani-Building 37-10, Udagawa-cho Shibuya-ku Tokyo, Udagawa-cho Shibuya-ku Tokyo, 150-0042, JP)
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