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Title:
METHOD FOR GROWING III NITRIDE SINGLE CRYSTAL
Document Type and Number:
WIPO Patent Application WO/2007/111219
Kind Code:
A1
Abstract:
Provided is a method for growing an AlxGa1-x single crystal (4) by sublimation. The method includes a step of arranging a material (1) in a crucible (12), and a step of growing an AlxGa1-xN (0

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Inventors:
MIYANAGA MICHIMASA (JP)
MIZUHARA NAHO (JP)
FUJIWARA SHINSUKE (JP)
NAKAHATA HIDEAKI (JP)
KAWASE TOMOHIRO (JP)
Application Number:
PCT/JP2007/055868
Publication Date:
October 04, 2007
Filing Date:
March 22, 2007
Export Citation:
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Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
MIYANAGA MICHIMASA (JP)
MIZUHARA NAHO (JP)
FUJIWARA SHINSUKE (JP)
NAKAHATA HIDEAKI (JP)
KAWASE TOMOHIRO (JP)
International Classes:
C30B29/38; C30B23/00
Domestic Patent References:
WO2000022204A22000-04-20
WO2006110512A12006-10-19
Foreign References:
JP2006027988A2006-02-02
JP2005343722A2005-12-15
JP2006052123A2006-02-23
JP2004307333A2004-11-04
JP2006027988A2006-02-02
US5858086A1999-01-12
US6296956B12001-10-02
US6001748A1999-12-14
Other References:
See also references of EP 2000567A4
Attorney, Agent or Firm:
FUKAMI, Hisao et al. (Nakanoshima Central Tower 22nd Floor,2-7, Nakanoshima 2-chome, Kita-k, Osaka-shi Osaka 05, JP)
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