Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
METHOD FOR GROWING III NITRIDE SINGLE CRYSTAL
Document Type and Number:
WIPO Patent Application WO/2007/111219
Kind Code:
A1
Abstract:
Provided is a method for growing an AlxGa1-x single crystal (4) by sublimation. The method includes a step of arranging a material (1) in a crucible (12), and a step of growing an AlxGa1-xN (0

More Like This:
WO/2007/119433GROUP III-V NITRIDE LAYER AND METHOD FOR PRODUCING THE SAME
JP2009096695METHOD FOR PRODUCING NITRIDE SINGLE CRYSTAL BODY
JP2007153712FREE-STANDING GALLIUM NITRIDE SINGLE CRYSTAL SUBSTRATE AND ITS MANUFACTURING METHOD
Inventors:
MIYANAGA, Michimasa (1-1, Koyakita 1-chome, Itami-sh, Hyogo 16, 6640016, JP)
宮永 倫正 (〒16 兵庫県伊丹市昆陽北一丁目１番１号 住友電気工業株式会社 伊丹製作所内 Hyogo, 6640016, JP)
MIZUHARA, Naho (1-1, Koyakita 1-chome, Itami-sh, Hyogo 16, 6640016, JP)
水原 奈保 (〒16 兵庫県伊丹市昆陽北一丁目１番１号 住友電気工業株式会社 伊丹製作所内 Hyogo, 6640016, JP)
FUJIWARA, Shinsuke (1-1, Koyakita 1-chome, Itami-sh, Hyogo 16, 6640016, JP)
Application Number:
JP2007/055868
Publication Date:
October 04, 2007
Filing Date:
March 22, 2007
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
SUMITOMO ELECTRIC INDUSTRIES, LTD. (5-33, Kitahama 4-chome Chuo-ku, Osaka-sh, Osaka 41, 5410041, JP)
住友電気工業株式会社 (〒41 大阪府大阪市中央区北浜四丁目５番３３号 Osaka, 5410041, JP)
MIYANAGA, Michimasa (1-1, Koyakita 1-chome, Itami-sh, Hyogo 16, 6640016, JP)
宮永 倫正 (〒16 兵庫県伊丹市昆陽北一丁目１番１号 住友電気工業株式会社 伊丹製作所内 Hyogo, 6640016, JP)
MIZUHARA, Naho (1-1, Koyakita 1-chome, Itami-sh, Hyogo 16, 6640016, JP)
水原 奈保 (〒16 兵庫県伊丹市昆陽北一丁目１番１号 住友電気工業株式会社 伊丹製作所内 Hyogo, 6640016, JP)
International Classes:
C30B29/38; C30B23/00
Attorney, Agent or Firm:
FUKAMI, Hisao et al. (Fukami Patent Office, Nakanoshima Central Tower 22nd Floor,2-7, Nakanoshima 2-chome, Kita-k, Osaka-shi Osaka 05, 5300005, JP)
Download PDF:
View/Download PDF      PDF Help



 
Previous Patent: ANTENNA AND RADIO RECEIVER HAVING THE ANTENNA

Next Patent: FLAKE GLASS FILLER AND RESIN COMPOSITION CONTAINING SAME