Title:
METHOD FOR GROWING SILICON MONOCRYSTAL
Document Type and Number:
WIPO Patent Application WO/2019/102702
Kind Code:
A1
Abstract:
A method for using the CZ method to grow a highly resistive silicon monocrystal that involves, when growing the silicon monocrystal, calculating a value equivalent to 1/3 the dopant concentration contributing to the target resistivity of the silicon monocrystal, setting growth conditions for controlling the concentration of light element impurities in the silicon monocrystal to be grown such that the amount of change in the carrier concentration due to donors originating with light element impurities that may form when a device is produced on the grown silicon monocrystal is at least the calculated value, and growing the silicon monocrystal having the target resistivity on the basis of the set growth conditions. Thus, provided is the method for growing a highly resistive silicon monocrystal which can suppress generation of donors originating with the light element impurities even following the device step and which can minimize variation from the target resistivity.
Inventors:
HOSHI RYOJI (JP)
Application Number:
PCT/JP2018/034723
Publication Date:
May 31, 2019
Filing Date:
September 20, 2018
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
International Classes:
C30B29/06; C30B15/20
Domestic Patent References:
| WO2014013675A1 | 2014-01-23 |
Foreign References:
| JP2013142054A | 2013-07-22 | |||
| JP2010202414A | 2010-09-16 | |||
| JP2010205936A | 2010-09-16 | |||
| US20030106482A1 | 2003-06-12 |
Attorney, Agent or Firm:
YOSHIMIYA Mikio et al. (JP)
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