Title:
METHOD FOR IMPLEMENTING LOW ELECTROMAGNETIC INTERFERENCE SILICON CARBIDE POWER SEMICONDUCTOR DEVICE DRIVING CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2023/000426
Kind Code:
A1
Abstract:
The present invention provides a method for implementing a low electromagnetic interference silicon carbide power semiconductor device driving circuit. In the present invention, a driving resistor having a low resistance is used during a process of the turn-off voltage of a silicon carbide MOSFET power semiconductor device rising from zero, and when the current of the silicon carbide MOSFET power semiconductor device drops to about 90%, the driving resistor is switched to use a driving resistor having a higher resistance for turn-off and damping control of the silicon carbide MOSFET power semiconductor device.
Inventors:
YANG SHUHAO (CN)
WANG ZHIKUN (CN)
WANG ZHIKUN (CN)
Application Number:
PCT/CN2021/113605
Publication Date:
January 26, 2023
Filing Date:
August 19, 2021
Export Citation:
Assignee:
GUANGHUA LINGANG ENGINEERING APPLICATION AND TECH R&D SHANGHAI CO LTD (CN)
International Classes:
H02M1/08
Foreign References:
| CN109412394A | 2019-03-01 | |||
| CN109861679A | 2019-06-07 | |||
| CN108270424A | 2018-07-10 | |||
| US20140320194A1 | 2014-10-30 | |||
| CN103944549A | 2014-07-23 |
Attorney, Agent or Firm:
BEIJING HUACHUANG ZHIDAO INTELLECTUAL PROPERTY AGENCY (CN)
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