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Title:
METHOD FOR IMPROVING CORROSION RESISTANCE OF SILICON NITRIDE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/007341
Kind Code:
A1
Abstract:
A method for improving the corrosion resistance of silicon nitride, and a method for manufacturing a semiconductor device. The method for improving the corrosion resistance of silicon nitride comprises: providing a semiconductor substrate; depositing a silicon nitride layer on the semiconductor substrate by means of plasma enhanced chemical vapor deposition, the silicon nitride layer being deposited by using ammonia gas and a silane as reactants, and the gas flow ratio of the silane to the ammonia gas being within a range of 3-6; annealing the silicon nitride layer; performing wet etching on the silicon nitride layer and corroding a part of the substrate.

Inventors:
DAI, Dan (No. 8 Xinzhou Road, Wuxi New District, Jiangsu 8, 214028, CN)
XIA, Changfeng (No. 8 Xinzhou Road, Wuxi New District, Jiangsu 8, 214028, CN)
ZHOU, Guoping (No. 8 Xinzhou Road, Wuxi New District, Jiangsu 8, 214028, CN)
Application Number:
CN2018/094333
Publication Date:
January 10, 2019
Filing Date:
July 03, 2018
Export Citation:
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Assignee:
CSMC TECHNOLOGIES FAB2 CO., LTD. (No. 8 Xinzhou Road, Wuxi New District, Jiangsu 8, 214028, CN)
International Classes:
H01L21/02
Foreign References:
CN101850944A2010-10-06
CN103239761A2013-08-14
CN102254814A2011-11-23
US20100230776A12010-09-16
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (Room 3901, No. 85 Huacheng Avenue Tianhe Distric, Guangzhou Guangdong 3, 510623, CN)
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