METHOD OF IMPROVING CRYSTAL QUALITY OF PASTE-TOGETHER SUBSTRATE HAVING SANDBLAST PROCESSING IMPLEMENTED

WIPO Patent Application WO/2010/140510

A1

Provided is a method to prevent micro defects from being generated, in a process in which a peeling-off damaged layer of a Si-layer is to be removed by etching, and a donor film is to be formed, when implementing sandblast processing on the handle-substrate side, after forming the Si-layer with the SiGen method or the like, and after protecting the surface of a paste-together layer in advance. Provided is a method of manufacturing a paste-together substrate equipped with a donor film on the handle-substrate, which comprises: a process (S1) in which the paste-together layer is formed on aforementioned handle-substrate, with the ion-implantation peeling-off method; a process (S2) in which the surface of aforementioned paste-together layer is covered with a protection member; a process (S3) in which sandblast processing is implemented on the surface of aforementioned handle-substrate; a process (S5) in which aforementioned protection member is peeled off; a process (S6) in which washing without any etching effect is implemented on the surface of the paste-together layer that already had aforementioned peeling-off of protection member implemented; and a process (S7) in which aforementioned donor film is formed, by performing chemical etching on the surface of the paste-together layer that already had aforementioned washing process implemented.

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AKIYAMA, Shoji (SHIN-ETSU CHEMICAL CO. LTD., 13-1, Isobe 2-chome, Annaka-sh, Gunma 95, 〒3790195, JP)
秋山　昌次 (〒95 群馬県安中市磯部２丁目１３番１号　信越化学工業株式会社　精密機能材料研究所内 Gunma, 〒3790195, JP)
KUBOTA, Yoshihiro (SHIN-ETSU CHEMICAL CO. LTD., 13-1, Isobe 2-chome, Annaka-sh, Gunma 95, 〒3790195, JP)
久保田　芳宏 (〒95 群馬県安中市磯部２丁目１３番１号　信越化学工業株式会社　精密機能材料研究所内 Gunma, 〒3790195, JP)
KAWAI, Makoto (SHIN-ETSU CHEMICAL CO. LTD., 13-1, Isobe 2-chome, Annaka-sh, Gunma 95, 〒3790195, JP)
川合　信 (〒95 群馬県安中市磯部２丁目１３番１号　信越化学工業株式会社　精密機能材料研究所内 Gunma, 〒3790195, JP)

JP2010/058827

December 09, 2010

May 25, 2010

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SHIN-ETSU CHEMICAL CO., LTD. (6-1 Otemachi 2-chome, Chiyoda-ku Tokyo, 04, 〒1000004, JP)
信越化学工業株式会社 (〒04 東京都千代田区大手町二丁目６番１号 Tokyo, 〒1000004, JP)
AKIYAMA, Shoji (SHIN-ETSU CHEMICAL CO. LTD., 13-1, Isobe 2-chome, Annaka-sh, Gunma 95, 〒3790195, JP)
秋山　昌次 (〒95 群馬県安中市磯部２丁目１３番１号　信越化学工業株式会社　精密機能材料研究所内 Gunma, 〒3790195, JP)
KUBOTA, Yoshihiro (SHIN-ETSU CHEMICAL CO. LTD., 13-1, Isobe 2-chome, Annaka-sh, Gunma 95, 〒3790195, JP)
久保田　芳宏 (〒95 群馬県安中市磯部２丁目１３番１号　信越化学工業株式会社　精密機能材料研究所内 Gunma, 〒3790195, JP)
KAWAI, Makoto (SHIN-ETSU CHEMICAL CO. LTD., 13-1, Isobe 2-chome, Annaka-sh, Gunma 95, 〒3790195, JP)

H01L21/02; B24C1/06; H01L21/304; H01L27/12

OKUYAMA, Shoichi et al. (7th Floor, Akasaka Eight One Building 13-5, Nagata-cho 2-chome, Chiyoda-k, Tokyo 14, 〒1000014, JP)

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