Title:
METHOD FOR IMPROVING HARDNESS OF FIRED PRODUCT
Document Type and Number:
WIPO Patent Application WO/2023/149553
Kind Code:
A1
Abstract:
[Problem] An objective of the present invention is to provide: a method for improving the hardness of a fired product that is to serve as a resist underlayer film for use in a lithography process for semiconductor device manufacturing using a novolac resin; a fired product having improved hardness that can suppress pattern bending during etching; a method for manufacturing a resist underlayer film in which the fired product serves as the resist underlayer film; and a method for manufacturing a semiconductor device. [Solution] A method for improving the hardness of a fired product with which, by firing a composition having a compound containing one or more structures represented by formula (1) at 400°C to 600°C in an inert gas atmosphere, the hardness of the obtained fired product is increased by 10% or more relative to the hardness of the fired product obtained at 350°C in an air atmosphere. A fired product obtained by said method. A method for manufacturing a resist underlayer film including a step for forming, on a semiconductor substrate, a resist underlayer film comprising the fired product. A method for manufacturing a semiconductor device. (In the formula, * represents a bond.)
Inventors:
HATTORI HAYATO (JP)
IZUMI AKIHITO (JP)
IZUMI AKIHITO (JP)
Application Number:
PCT/JP2023/003611
Publication Date:
August 10, 2023
Filing Date:
February 03, 2023
Export Citation:
Assignee:
NISSAN CHEMICAL CORP (JP)
International Classes:
C08G8/28; C08L101/02; G03F7/11; H01L21/027
Domestic Patent References:
| WO2017188263A1 | 2017-11-02 | |||
| WO2014115843A1 | 2014-07-31 | |||
| WO2014038483A1 | 2014-03-13 |
Foreign References:
| JP2019044022A | 2019-03-22 |
Attorney, Agent or Firm:
HANABUSA PATENT & TRADEMARK OFFICE (JP)
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