Title:
METHOD FOR IMPROVING SILICON-WAFER CLEANING EFFECT
Document Type and Number:
WIPO Patent Application WO/2024/051135
Kind Code:
A1
Abstract:
A method for improving a silicon-wafer cleaning effect. The method is characterized by comprising the following steps: step I, a pre-cleaned silicon wafer being put into a first feeding tank (1), wherein the silicon wafer is immersed under a water surface in the first feeding tank (1), and the direction in which water is fed into the first feeding tank (1) and the direction in which the silicon wafer moves are opposite; step II, the silicon wafer entering a second feeding tank (2), wherein a water surface in the second feeding tank (2) is higher than the water surface in the first feeding tank (1), pure water in the second feeding tank (2) overflows into the first feeding tank (1) to form second-stage overflowing, and the direction in which water is fed into the second feeding tank (2) and the direction in which the silicon wafer moves are opposite; and step III, the silicon wafer passing through a treatment tank and a discharge tank in sequence and finally being spin-dried. By means of changing an original one large feeding tank into two tanks, the silicon wafer enters the first feeding tank (1) and then the second feeding tank (2); and the original functions of bubbling and overflowing are retained, and the functions of countercurrent rinsing and second-stage overflowing are additionally provided.
Inventors:
MA AI (CN)
HONG YI (CN)
HONG YI (CN)
Application Number:
PCT/CN2023/081614
Publication Date:
March 14, 2024
Filing Date:
March 15, 2023
Export Citation:
Assignee:
SHANGHAI SEMICONDUCTOR WAFER TECH CO LTD (CN)
International Classes:
B08B3/04; B08B3/00; C25D5/00; C25D21/00; C25D21/08; H01L21/00; H01L21/67
Foreign References:
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| US20020104556A1 | 2002-08-08 |
Attorney, Agent or Firm:
SHANGHAI DAYCREATE INTELLECTUAL PROPERTY CO., LTD. (CN)
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