Title:
METHOD FOR IMPROVING STABILITY OF IGZO THIN FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2019/095419
Kind Code:
A1
Abstract:
A method for improving the stability of an indium gallium zinc oxide (IGZO) thin film transistor (2), the method comprising the following steps: forming an IGZO thin film transistor (2) on a substrate (1); forming a passivation layer on the IGZO thin film transistor (2); performing hydrophobization processing on the passivation layer to form a hydrophobic group (4) on the passivation layer. The method for improving the stability of an IGZO thin film transistor may improve the effect of the passivation layer on the IGZO thin film transistor (2) blocking water vapor, thus solving the problem of the negative drift of the threshold voltage of the IGZO thin film transistor (2), and preventing the IGZO thin film transistor (2) from failing due to the severe negative bias of the threshold voltage.
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Inventors:
SHI LONGQIANG (CN)
Application Number:
PCT/CN2017/112574
Publication Date:
May 23, 2019
Filing Date:
November 23, 2017
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD (CN)
International Classes:
H01L21/56; H01L21/34
Foreign References:
| CN105655298A | 2016-06-08 | |||
| CN105489611A | 2016-04-13 | |||
| CN103077943A | 2013-05-01 | |||
| CN104269355A | 2015-01-07 | |||
| US20010004280A1 | 2001-06-21 |
Attorney, Agent or Firm:
SHENZHEN RONDA PATENT AND TRADEMARK LAW OFFICE (CN)
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