Title:
METHOD FOR INTRODUCING IMPURITIES
Document Type and Number:
WIPO Patent Application WO/2005/076328
Kind Code:
A1
Abstract:
A method for introducing impurities, in which a process of a combination of amorphizing plasma irradiation and plasma doping can be repeated through a simple step with a high throughput without causing any failure of the equipment. At the time of switching between the plasma used in the amorphizing plasma irradiation and the plasma used in plasma doping, discharge is stopped and the initial conditions at the matching point of a high frequency power supply or the peripheral circuit are reset suitably to the plasma used in each process. Alternatively, the load on the high frequency power is lightened at the time of the switching by raising the pressure or lowering the bias voltage.
Inventors:
Sasaki, Yuichiro
Okumura, Tomohiro
Mizuno, Bunji
Jin, Cheng-guo
Nakayama, Ichiro
Maeshima, Satoshi
Okashita, Katsumi
Okumura, Tomohiro
Mizuno, Bunji
Jin, Cheng-guo
Nakayama, Ichiro
Maeshima, Satoshi
Okashita, Katsumi
Application Number:
PCT/JP2005/001706
Publication Date:
August 18, 2005
Filing Date:
February 04, 2005
Export Citation:
Assignee:
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (1006, Oaza Kadoma Kadoma-sh, Osaka 01, 57185, JP)
Sasaki, Yuichiro
Okumura, Tomohiro
Mizuno, Bunji
Jin, Cheng-guo
Nakayama, Ichiro
Maeshima, Satoshi
Okashita, Katsumi
Sasaki, Yuichiro
Okumura, Tomohiro
Mizuno, Bunji
Jin, Cheng-guo
Nakayama, Ichiro
Maeshima, Satoshi
Okashita, Katsumi
International Classes:
H01L21/265; H01L21/223; H01L21/02; (IPC1-7): H01L21/265
Attorney, Agent or Firm:
Takamatsu, Takeshi (Eikoh Patent Office, 7-13 Nishi-Shimbashi, 1-chom, Minato-ku Tokyo 03, 10500, JP)
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