Title:
A METHOD OF ION IMPLANTATION TO REDUCE TRANSIENT ENHANCED DIFFUSION
Document Type and Number:
WIPO Patent Application WO2006064282
Kind Code:
B1
Abstract:
A method of ion implantation comprises the steps of: providing a semiconductor substrate; performing a pre-amorphisation implant in the semiconductor substrate in a direction of implant at an angle in the range of 20-60° to a normal to a surface of the semiconductor substrate, and performing an implant of a dopant in the semiconductor substrate to provide a shallow junction. In a feature of the invention, the method further comprises performing an implant of a defect trapping element in the semiconductor substrate and the pre-amorphisation implant step is performed at a first implant energy and the implant of a defect trapping element is performed at a second implant energy, the ratio of the first implant energy to the second implant energy being in the range of 10-40%.
Inventors:
GRAOUI HOUDA (US)
FOAD MAJEED ALI (US)
AL-BAYATI AMIR (US)
FOAD MAJEED ALI (US)
AL-BAYATI AMIR (US)
Application Number:
PCT/GB2005/004925
Publication Date:
November 09, 2006
Filing Date:
December 19, 2005
Export Citation:
Assignee:
APPLIED MATERIALS INC (US)
GRAOUI HOUDA (US)
FOAD MAJEED ALI (US)
AL-BAYATI AMIR (US)
GRAOUI HOUDA (US)
FOAD MAJEED ALI (US)
AL-BAYATI AMIR (US)
International Classes:
H01L21/265; H01L21/324
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