Title:
METHOD AND JIG FOR PRODUCING SILICON
Document Type and Number:
WIPO Patent Application WO/2011/111766
Kind Code:
A1
Abstract:
Disclosed is a method for producing silicon using an arc furnace, whereby it is possible to reduce the phosphorus concentration in the silicon. Specifically disclosed is a method for producing silicon by using a heating furnace to heat at least a starting material for silicon production which consists of a silica starting material and a carbon material, a silica starting material and silicon carbide, or only a silicon starting material, said method being characterized by the inclusion of a step for manipulating the starting material for silicon production and/or the heating products thereof on the interior of the heating furnace by means of a jig. The method is further characterized in that said jig has a nonmetallic material section with a bending strength of 100 MPa or greater and a melting point equal to or greater than that of silicon, and in that at least the portion of the jig that comes into contact with the starting material for silicon production or the heating products thereof, which have a temperature of at least 1000°C, is constituted by the nonmetallic material section.
Inventors:
KATAYAMA Toshiaki (())
片山 利昭 (())
片山 利昭 (())
Application Number:
JP2011/055591
Publication Date:
September 15, 2011
Filing Date:
March 10, 2011
Export Citation:
Assignee:
MITSUBISHI CHEMICAL CORPORATION (14-1, Shiba 4-chome Minato-k, Tokyo 14, 〒1080014, JP)
三菱化学株式会社 (〒14 東京都港区芝四丁目１４番１号 Tokyo, 〒1080014, JP)
KATAYAMA Toshiaki (())
三菱化学株式会社 (〒14 東京都港区芝四丁目１４番１号 Tokyo, 〒1080014, JP)
KATAYAMA Toshiaki (())
International Classes:
C01B33/025; C01B33/021; F27D1/00; F27D3/14
Attorney, Agent or Firm:
HAMADA Yuriko et al. (Eikoh Patent Firm, Toranomon East Bldg. 10F 7-13, Nishi-Shimbashi 1-chome, Minato-k, Tokyo 03, 〒1050003, JP)
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Claims: