Title:
METHOD FOR JOINING METAL, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/154870
Kind Code:
A1
Abstract:
This method for joining metal includes a step for adjusting the surface roughness of a first metal member 1a and a second metal member 1b to 0.5-200 μm, a step for disposing an organic reducing agent 2 between the first metal member 1a and the second metal member 1b, and a step for applying heat and pressure between the first metal member 1a and the second metal member 1b to join the same.
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Inventors:
ALONG HENG (JP)
Application Number:
PCT/JP2017/040756
Publication Date:
August 30, 2018
Filing Date:
November 13, 2017
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
B23K20/00; B23K20/16; B23K20/24; H01L21/52; H01L21/60; H05K3/32
Domestic Patent References:
WO2013141149A1 | 2013-09-26 | |||
WO2014181688A1 | 2014-11-13 |
Foreign References:
JP2014099596A | 2014-05-29 | |||
US20160035683A1 | 2016-02-04 |
Attorney, Agent or Firm:
SOGA, Michiharu et al. (JP)
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