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Title:
METHOD FOR THE LIGHT-INDUCED, GALVANIC PULSED DEPOSITION FOR FORMING A SEED LAYER FOR A METAL CONTACT OF A SOLAR CELL AND FOR THE SUBSEQUENT REINFORCEMENT OF SAID SEED LAYER OR SAID METAL CONTACT AND ARRANGEMENT FOR CARRYING OUT THE METHOD
Document Type and Number:
WIPO Patent Application WO/2011/047875
Kind Code:
A3
Abstract:
The present invention relates to a light-induced, galvanic deposition method, wherein the potential difference between a first metal contact and an auxiliary electrode is varied as a function of time according to a predefined voltage/time characteristic and a light radiation on a solar cell is varied as a function of time according to a light radiation/time characteristic.

Inventors:
RADTKE VALENTIN (DE)
BAY NORBERT (DE)
ALEMAN MONICA (DE)
Application Number:
PCT/EP2010/006468
Publication Date:
February 09, 2012
Filing Date:
October 22, 2010
Export Citation:
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Assignee:
FRAUNHOFER GES FORSCHUNG (DE)
UNIV ALBERT LUDWIGS FREIBURG (DE)
RADTKE VALENTIN (DE)
BAY NORBERT (DE)
ALEMAN MONICA (DE)
International Classes:
C25D5/00; C25D5/02; C25D5/18; C25D7/12; C25D17/00; H01L21/288; H01L31/0224
Foreign References:
US4251327A1981-02-17
DE3505318A11985-08-14
EP2298965A22011-03-23
Other References:
N. BAY ET AL: "Electrolytic nickel deposition for the front side metallization of silicon solar cells", 24TH EUROPEAN PV SOLAR ENERGY CONFERENCE AND EXHIBITION, 25 September 2009 (2009-09-25), Hamburg, Germany, XP055012091
Attorney, Agent or Firm:
PFENNING, MEINIG & PARTNER GBR (München, DE)
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