Title:
METHOD FOR LOCAL HIGH-DOPING AND CONTACTING OF A SEMICONDUCTOR STRUCTURE WHICH COMPRISES A SOLAR CELL OR A PRECURSOR OF A SOLAR CELL
Document Type and Number:
WIPO Patent Application WO/2011/091959
Kind Code:
A8
Abstract:
The invention relates to a method for local high-doping and contacting of a semiconductor structure which is a solar cell or a precursor of a solar cell and has a silicon semiconductor substrate (1) of a base doping type. The high-doping and contacting is effected by producing a plurality of local high-doping regions of the base doping type in the semiconductor substrate (1) on a contacting side (1a) of the semiconductor substrate and applying a metal contacting layer (7) to the contacting side (1a) or, if applicable, one or more intermediate layers wholly or partially covering the contacting side (1a), to form electrically conductive connections between the metal contacting layer (7) and the semiconductor substrate (1) at the high doping regions.
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Inventors:
SUWITO DOMINIK (DE)
BENICK JAN (DE)
JAEGER ULRICH (DE)
BENICK JAN (DE)
JAEGER ULRICH (DE)
Application Number:
PCT/EP2011/000180
Publication Date:
September 07, 2012
Filing Date:
January 18, 2011
Export Citation:
Assignee:
FRAUNHOFER GES FORSCHUNG (DE)
UNIV ALBERT LUDWIGS FREIBURG (DE)
SUWITO DOMINIK (DE)
BENICK JAN (DE)
JAEGER ULRICH (DE)
UNIV ALBERT LUDWIGS FREIBURG (DE)
SUWITO DOMINIK (DE)
BENICK JAN (DE)
JAEGER ULRICH (DE)
International Classes:
H01L31/0216; H01L21/268; H01L31/0224; H01L31/061; H01L31/18
Attorney, Agent or Firm:
DICKER, Jochen et al. (Brommer & PartnerBismarckstraße 16, Karlsruhe, DE)
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