Title:
METHOD FOR LOWERING CONTACT RESISTANCE OF TWO-DIMENSIONAL MATERIAL FIELD EFFECT TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2019/095532
Kind Code:
A1
Abstract:
The invention relates to a method for lowering contact resistance of a two-dimensional material field effect transistor. The method comprises the following steps: evaporating at least one transitional metal region (3) on the partial surface of a substrate (9) to form a transitional metal layer, wherein the transitional metal region (3) is 0.1-2nm in thickness; performing photoetching and developing to form a photoresist layer (4), wherein at least two holes (5) for evaporating source and drain electrodes (6) are formed in the photoresist layer (4),each hole (5) is just aligned to the partial transitional metal layer and the partial surface of the substrate (9), and each hole (5) is positioned in one side of the transitional metal region (3); evaporating the source and drain electrodes (6) in the holes (5), then removing the photoresist layer (4) to expose the other part of the substrate (9); and adopting a sulphur source to perform sulfuration on the transitional metal, or adopting aselenium source to perform selenylation on the transitional metal, and then performing cooling to form the two-dimensional material field effect transistor on the surface of the substrate (9). By adopting the source and drain electrodes (6) as a protection isolation layer according to the method, a two-dimensional material channel is formed between the source and drain electrodes (6), so that the overlapped area between the channel and the source and drain electrodes (6) is reduced, thereby lowering the contact resistance therebetween.
Inventors:
LI SHAOJUAN (CN)
MA WEILIANG (CN)
YUAN JIAN (CN)
TUO MINGFEN (CN)
MA WEILIANG (CN)
YUAN JIAN (CN)
TUO MINGFEN (CN)
Application Number:
PCT/CN2018/071344
Publication Date:
May 23, 2019
Filing Date:
January 04, 2018
Export Citation:
Assignee:
UNIV SOOCHOW (CN)
International Classes:
H01L21/335; H01L29/417
Foreign References:
| CN106486531A | 2017-03-08 | |||
| CN106328708A | 2017-01-11 | |||
| CN106129112A | 2016-11-16 | |||
| CN107017303A | 2017-08-04 | |||
| US20170098717A1 | 2017-04-06 |
Attorney, Agent or Firm:
CENTRAL SOUTH WELL INTELLECTUAL PROPERTY OFFICE (CN)
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