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Title:
METHOD FOR MAKING GROUP III NITRIDE DEVICES AND DEVICES PRODUCED THEREBY
Document Type and Number:
WIPO Patent Application WO2004084275
Kind Code:
A3
Abstract:
A method is for making at least one semiconductor device including providing a sacrificial growth substrate of Lithium Aluminate (LiAlO2); forming at least one semiconductor layer including a Group III nitride adjacent the sacrificial growth substrate; attaching a mounting substrate adjacent the at least one semiconductor layer opposite the sacrificial growth substrate; and removing the sacrificial growth substrate. The method may further include adding at least one contact onto a surface of the at least one semiconductor layer opposite the mounting substrate, and dividing the mounting substrate and at least one semiconductor layer into a plurality of individual semiconductor devices. To make the final devices, the method may further include bonding the mounting substrate of each individual semiconductor device to a heat sink. The step of removing the sacrificial substrate may include wet etching the sacrificial growth substrate.

Inventors:
CHAI BRUCE H T (US)
GALLAGHER JOHN JOSEPH (US)
HILL DAVID WAYNE (US)
Application Number:
PCT/US2004/008266
Publication Date:
December 09, 2004
Filing Date:
March 18, 2004
Export Citation:
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Assignee:
CRYSTAL PHOTONICS INC (US)
CHAI BRUCE H T (US)
GALLAGHER JOHN JOSEPH (US)
HILL DAVID WAYNE (US)
International Classes:
C30B25/02; C30B25/18; C30B29/60; H01L21/20; H01L21/205; H01L33/00; (IPC1-7): H01L33/00; H01L21/20
Foreign References:
DE19953839A12001-05-10
US6448102B12002-09-10
US5724376A1998-03-03
US3959045A1976-05-25
US6072197A2000-06-06
US20030024472A12003-02-06
US5625202A1997-04-29
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