Title:
METHOD OF MAKING A III-NITRIDE LIGHT-EMITTING DEVICE WITH INCREASED LIGHT GENERATING CAPABILITY
Document Type and Number:
WIPO Patent Application WO2001047039
Kind Code:
A8
Abstract:
The present invention describes a method for fabricating an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode (22) that interposes the p-electrode metallization (20) to provide low series resistance. The p-electrode metallization is opaque, highly reflective, and provides excellent current spreading. The p-electrode absorbs less than 25% of incident light per pass at the peak emission wavelength of the LED active region (13). A submount (50) is used to provide electrical and thermal connection between the LED die and the package. The submount material may be Si to provide electronic functionality such as voltage-compliance limiting operation. The entire device, including the LED-submount interface, is designed for low thermal resistance to allow for high current density operation. Finally the device may include a high-refractive-index (n > 1.8) superstrate (10).
More Like This:
Inventors:
WIERER JONATHAN J JR
KRAMES MICHAEL R
STEIGERWALD DANIEL A
KISH FRED A JR
RAJKOMAR PRADEEP
KRAMES MICHAEL R
STEIGERWALD DANIEL A
KISH FRED A JR
RAJKOMAR PRADEEP
Application Number:
PCT/US2000/035303
Publication Date:
October 25, 2001
Filing Date:
December 21, 2000
Export Citation:
Assignee:
LUMILEDS LIGHTING LLC (US)
International Classes:
H01L25/075; H01L27/15; H01L33/00; H01L33/08; H01L33/40; H01L33/64; H01L33/32; H01L33/38; H01L33/60; (IPC1-7): H01L33/00; H01L27/15
Download PDF: