Title:
METHOD OF MAKING A NANOSCALE ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO2004041712
Kind Code:
A3
Abstract:
The present invention relates to a method of making a nanoscale electronic device wherein said device comprises a gap between about 0.1 nm and about 100 nm between at least two conductors, semiconductors or the combination thereof. The method features complete assembly of electrical contacts before addition of a molecular component thereby preserving the integrity of the molecular electronic component and maintaining a well-formed gap. The gap produced is within the nanoscale regime, has uniform width and is further characterized by surfaces that are uniformly smooth.
Inventors:
PANG HARRY F
TOUR JAMES M
TOUR JAMES M
Application Number:
PCT/US2003/014959
Publication Date:
December 09, 2004
Filing Date:
May 13, 2003
Export Citation:
Assignee:
UNIV RICE WILLIAM M (US)
International Classes:
H01L21/28; H01L21/336; H01L21/44; H01L21/8238; H01L51/00; B82B; (IPC1-7): H01L21/44; H01L21/28; H01L21/336
Foreign References:
| US5712201A | 1998-01-27 | |||
| US6319824B1 | 2001-11-20 | |||
| US20020048865A1 | 2002-04-25 | |||
| US6043115A | 2000-03-28 | |||
| US6064085A | 2000-05-16 |
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