Title:
METHOD FOR MANAGING FILM QUALITY OF OXIDE SEMICONDUCTOR THIN-FILM
Document Type and Number:
WIPO Patent Application WO/2016/088491
Kind Code:
A1
Abstract:
Provided is a method capable of performing qualitative or quantitative determination of the quality of a BCE step or the quality of a passivation insulating film after the BCE step in a contactless and non-destructive manner. A method for indirectly monitoring a change in a surface of an oxide semiconductor thin-film that is caused when a metal thin-film on a channel region of a thin-film transistor is removed by patterning, by wet etching or dry etching, the metal thin film directly layered on the oxide semiconductor thin-film formed on a substrate comprises irradiating the oxide semiconductor thin-film surface with laser light, and monitoring a conductivity change of the oxide semiconductor thin-film as a microwave reflectivity change.
Inventors:
TAO HIROAKI
OCHI MOTOTAKA
KUGIMIYA TOSHIHIRO
KAWAKAMI NOBUYUKI
HAYASHI KAZUSHI
OCHI MOTOTAKA
KUGIMIYA TOSHIHIRO
KAWAKAMI NOBUYUKI
HAYASHI KAZUSHI
Application Number:
PCT/JP2015/080628
Publication Date:
June 09, 2016
Filing Date:
October 29, 2015
Export Citation:
Assignee:
KOBE STEEL LTD (JP)
International Classes:
H01L21/336; G01N22/00; H01L29/786
Foreign References:
| JP2012033857A | 2012-02-16 | |||
| JP2011054863A | 2011-03-17 | |||
| JP2014158004A | 2014-08-28 |
Attorney, Agent or Firm:
UEKI, Kyuichi et al. (JP)
Hisakazu Ueki (JP)
Hisakazu Ueki (JP)
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