Title:
METHOD FOR MANUFACTURING (110) SILICON WAFER
Document Type and Number:
WIPO Patent Application WO/2007/037096
Kind Code:
A1
Abstract:
Provided is a method for manufacturing a (110) silicon wafer by slicing a silicon
single crystal ingot having plane orientation (110) by using a wire saw. The method
for manufacturing the (110) silicon wafer is characterized in that the ingot
is sliced by permitting an angle formed by the running direction of the wire of
the wire saw and the [-112] direction and the [1-12] direction in the (110) silicon
single crystal ingot or a direction crystallographically equivalent to such
directions to be over 30°. Thus, breakage upon slicing is suppressed, and
manufacture yield is improved in the (110) silicon wafer manufacturing method.
Inventors:
OISHI HIROSHI (JP)
Application Number:
PCT/JP2006/317424
Publication Date:
April 05, 2007
Filing Date:
September 04, 2006
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
OISHI HIROSHI (JP)
OISHI HIROSHI (JP)
International Classes:
B24B27/06; B28D5/04; H01L21/304
Foreign References:
| JPH09262825A | 1997-10-07 | |||
| JP2002283340A | 2002-10-03 | |||
| JPH0917755A | 1997-01-17 |
Other References:
See also references of EP 1955813A4
Attorney, Agent or Firm:
YOSHIMIYA, Mikio (6-4 Motoasakusa 2-chom, Taito-ku Tokyo 41, JP)
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