Title:
METHOD FOR MANUFACTURING BACK SURFACE INCIDENT TYPE SEMICONDUCTOR PHOTO DETECTION ELEMENT
Document Type and Number:
WIPO Patent Application WO/2019/203125
Kind Code:
A1
Abstract:
A semiconductor substrate (11) having a first main surface (11a) and a second main surface (11b) opposing each other is prepared. The semiconductor substrate (11) has a first semiconductor region (13) of a first electrically conductive type. The semiconductor substrate (11) has at the second main surface (11b) side a plurality of planned regions (PR) that form a plurality of second semiconductor regions (15) of a second electrically conductive type that configure a pn junction with the first semiconductor region (13). A textured region is formed at the surface included in the plurality of planned regions (PR) of the second main surface (11b). After the textured region is formed, the plurality of second semiconductor regions (15) are formed on the plurality of planned regions (PR). The first main surface (11a) is the light incident surface to the semiconductor substrate.
Inventors:
TAGUCHI TOMOYA (JP)
YOSHIDA YUKI (JP)
SHIBAYAMA KATSUMI (JP)
YOSHIDA YUKI (JP)
SHIBAYAMA KATSUMI (JP)
Application Number:
PCT/JP2019/015833
Publication Date:
October 24, 2019
Filing Date:
April 11, 2019
Export Citation:
Assignee:
HAMAMATSU PHOTONICS KK (JP)
International Classes:
H01L31/10
Domestic Patent References:
WO2012140906A1 | 2012-10-18 |
Foreign References:
JP2011023417A | 2011-02-03 | |||
JP2009140941A | 2009-06-25 | |||
US20120313204A1 | 2012-12-13 | |||
US20120313204A1 | 2012-12-13 | |||
JP2011023417A | 2011-02-03 |
Other References:
See also references of EP 3783675A4
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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