Title:
METHOD FOR MANUFACTURING CIGS SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2013/183790
Kind Code:
A1
Abstract:
Provided is a method for manufacturing a CIGS sputtering target in which it is possible to simplify the process and improve productivity while preventing rapid selenization of the raw material. The method for manufacturing a CIGS sputtering target comprises: a heat treatment step for heating a mixture of raw material Cu, In, Ga, and Se placed in a container in a vacuum or an inert atmosphere to a heat treatment temperature equal to or higher than the melting point of Se and equal to or lower than the boiling point of Se and holding the mixture at the heat treatment temperature; a crushing step for crushing the heat treatment product in the container and producing crushed matter; and a sintering step for hot-pressing the crushed matter in a vacuum or an inert atmosphere.
More Like This:
| WO/2021/187586 | TRANSPARENT ELECTROCONDUCTIVE FILM |
| JP7419379 | split sputtering target |
| JP7046005 | Protective metal oxyfluoride coating |
Inventors:
KIHEDA YUKINORI (JP)
UENO HIROTO (JP)
MIWA KAZUO (JP)
UENO HIROTO (JP)
MIWA KAZUO (JP)
Application Number:
PCT/JP2013/066283
Publication Date:
December 12, 2013
Filing Date:
June 06, 2013
Export Citation:
Assignee:
FUTEK FURNACE INC (JP)
International Classes:
C23C14/34; B22F9/04; C22C28/00; C22C30/02; H01L31/04; B22F3/14; C22C1/04
Domestic Patent References:
| WO2011058828A1 | 2011-05-19 | |||
| WO2011148600A1 | 2011-12-01 | |||
| WO2012042959A1 | 2012-04-05 |
Foreign References:
| JP2012012229A | 2012-01-19 | |||
| JP2010047829A | 2010-03-04 | |||
| JP2012001803A | 2012-01-05 | |||
| CN101260513A | 2008-09-10 |
Attorney, Agent or Firm:
KURAHASHI, Akira et al. (JP)
Kurahashi 暎 (JP)
Kurahashi 暎 (JP)
Download PDF: