Title:
METHOD OF MANUFACTURING A COBALT CONTAINING THIN FILM
Document Type and Number:
WIPO Patent Application WO/2019/132113
Kind Code:
A1
Abstract:
The present invention relates to a method of manufacturing a cobalt containing thin film. According to the present invention, it is possible to provide a capping layer which is deposited on a metal wiring at a high deposition rate and planarized without deforming a shape of the cavity or a shape of the metal wiring due to a high aspect ratio in a highly integrated semiconductor device. Further, according to the present invention, it is possible to more improve the reliability of the metal wiring by providing a high-density, high-purity cobalt containing thin film by remarkably improving gap fill characteristics.
Inventors:
KIM MYONG WOON (KR)
LEE SANG ICK (KR)
CHO SUNG WOO (KR)
LEE KANG YONG (KR)
LEE SANG ICK (KR)
CHO SUNG WOO (KR)
LEE KANG YONG (KR)
Application Number:
PCT/KR2018/002428
Publication Date:
July 04, 2019
Filing Date:
February 28, 2018
Export Citation:
Assignee:
DNF CO LTD (KR)
International Classes:
H01L21/02; C07F15/06; C23C16/455; H01L21/285
Domestic Patent References:
| WO2011162255A1 | 2011-12-29 |
Foreign References:
| KR20150078776A | 2015-07-08 | |||
| KR20160122399A | 2016-10-24 | |||
| US20120214303A1 | 2012-08-23 | |||
| US20090029036A1 | 2009-01-29 |
Attorney, Agent or Firm:
PLUS INTERNATIONAL IP LAW FIRM (KR)
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