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Patent Searching and Data


Title:
METHOD FOR MANUFACTURING COLUMNAR SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/208486
Kind Code:
A1
Abstract:
This method for manufacturing a columnar semiconductor device has a step for forming W layers (52a, 52d), which are in contact with the side surface of an N+ layer (38b), and the side surface of a top portion of a W layer (43a), and which have a same width and a circular strip shape in plan view, by forming, on the side surface of the N+ layer (38b) of a top portion of a Si column (6b), and on the side surface of the top portion of the W layer (43a), a circular-strip-shaped SiO2 layer, and an AlO layer (51) on an outer peripheral portion surrounding the SiO2 layer, forming circular-strip-shaped contact holes by etching the circular-strip-shaped SiO2 layer using the AlO layer as a mask, and embedding the W layers (52a, 52b) in the contact holes.

Inventors:
MASUOKA FUJIO (JP)
HARADA NOZOMU (JP)
Application Number:
PCT/JP2016/089129
Publication Date:
December 07, 2017
Filing Date:
December 28, 2016
Export Citation:
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Assignee:
UNISANTIS ELECT SINGAPORE PTE (SG)
MASUOKA FUJIO (JP)
HARADA NOZOMU (JP)
International Classes:
H01L21/8244; H01L27/11
Domestic Patent References:
WO2014184933A12014-11-20
Foreign References:
JP2011029469A2011-02-10
JP2009141110A2009-06-25
JP2014220543A2014-11-20
Attorney, Agent or Firm:
KIMURA Mitsuru (JP)
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